Influence of dislocations and twin walls in BaTiO3 on the voltage-controlled switching of perpendicular magnetization

M. Goiriena-Goikoetxea, Z. Xiao, A. El-Ghazaly, C. V. Stan, J. Chatterjee, A. Ceballos, A. Pattabi, N. Tamura, R. Lo Conte, F. Hellman, R. Candler, and J. Bokor
Phys. Rev. Materials 5, 024401 – Published 1 February 2021
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Abstract

We investigate the influence of dislocations and twin walls in BaTiO3 on its ferroelectric response and the resulting effect on the perpendicular magnetic anisotropy (PMA) of a strain-coupled [CoNi]n film. A dense twinned structure in conjunction with a high dislocation density significantly reduces the converse piezoelectric effect of BaTiO3 by hindering the propagation of newly nucleated domains with an applied electric field. This, in turn, results in a modest reduction of the PMA of the ferromagnetic layer. On the other hand, the ferroelectric polarization reorients from [100] to [001] direction in a dislocation-free BaTiO3, inducing the maximum achievable in-plane compressive strain of 1.1%. A large fraction of this uniaxial strain is transferred to the magnetoelastically coupled ferromagnetic layers whose magnetization switches to in plane via the inverse magnetostriction effect. This work reveals the critical role of the interplay between twin walls and dislocations within a ferroelectric substrate in the performance of multiferroic heterostructures and provides insight into the development of highly energy-efficient magnetoelectric devices.

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  • Received 7 January 2020
  • Revised 20 November 2020
  • Accepted 19 January 2021

DOI:https://doi.org/10.1103/PhysRevMaterials.5.024401

©2021 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied PhysicsInterdisciplinary Physics

Authors & Affiliations

M. Goiriena-Goikoetxea1,2,*, Z. Xiao3,4, A. El-Ghazaly1, C. V. Stan4,5, J. Chatterjee1, A. Ceballos6,7, A. Pattabi1, N. Tamura4, R. Lo Conte1, F. Hellman6,7,8, R. Candler3,9, and J. Bokor1,7

  • 1Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, California 94720, USA
  • 2Department of Electricity and Electronics, University of the Basque Country, Leioa 48940, Spain
  • 3Department of Electrical and Computer Engineering, University of California, Los Angeles, Los Angeles, California 90095, USA
  • 4Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 5NIF and Photon Science, Lawrence Livermore National Laboratory, Livermore, California 94551, USA
  • 6Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720, USA
  • 7Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 8Department of Physics, University of California, Berkeley, Berkeley, California 94720, USA
  • 9California NanoSystems Institute, Los Angeles, California 90095, USA

  • *maite.goiriena@ehu.eus

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Issue

Vol. 5, Iss. 2 — February 2021

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