Abstract
Positron annihilation spectra reveal isolated zinc vacancy () creation in single-crystal ZnO exposed to 193-nm radiation at fluence. The appearance of a photoluminescence excitation peak at 3.18 eV in irradiated ZnO is attributed to an electronic transition from the acceptor level at to the conduction band. The observed density profile and hyperthermal ion emission support zinc vacancy-interstitial Frenkel pair creation by exciting a wide 6.34 eV Zn-O antibonding state at 193-nm photon—a novel photoelectronic process for controlled creation in ZnO.
- Received 4 February 2013
DOI:https://doi.org/10.1103/PhysRevLett.111.017401
© 2013 American Physical Society