Double resonance Raman modes in monolayer and few-layer MoTe2

Huaihong Guo, Teng Yang, Mahito Yamamoto, Lin Zhou, Ryo Ishikawa, Keiji Ueno, Kazuhito Tsukagoshi, Zhidong Zhang, Mildred S. Dresselhaus, and Riichiro Saito
Phys. Rev. B 91, 205415 – Published 12 May 2015
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Abstract

We study the second-order Raman process of mono- and few-layer MoTe2, by combining ab initio density functional perturbation calculations with experimental Raman spectroscopy using 532, 633, and 785 nm excitation lasers. The calculated electronic band structure and the density of states show that the resonance Raman process occurs at the M point in the Brillouin zone, where a strong optical absorption occurs due to a logarithmic Van Hove singularity of the electronic density of states. The double resonance Raman process with intervalley electron-phonon coupling connects two of the three inequivalent M points in the Brillouin zone, giving rise to second-order Raman peaks due to the M-point phonons. The calculated vibrational frequencies of the second-order Raman spectra agree with the observed laser-energy-dependent Raman shifts in the experiment.

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  • Received 13 January 2015
  • Revised 11 March 2015

DOI:https://doi.org/10.1103/PhysRevB.91.205415

©2015 American Physical Society

Authors & Affiliations

Huaihong Guo1,*, Teng Yang2,1,†, Mahito Yamamoto3, Lin Zhou4, Ryo Ishikawa5, Keiji Ueno6, Kazuhito Tsukagoshi3, Zhidong Zhang2, Mildred S. Dresselhaus4,7, and Riichiro Saito1

  • 1Department of Physics, Tohoku University, Sendai, Miyagi 980-8578, Japan
  • 2Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
  • 3International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044, Japan
  • 4Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4037, USA
  • 5Department of Functional Materials Science, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan
  • 6Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan
  • 7Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307, USA

  • *hhguo@alum.imr.ac.cn
  • yangteng@imr.ac.cn

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Issue

Vol. 91, Iss. 20 — 15 May 2015

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