Control of Material Damping in High-Q Membrane Microresonators

P.-L. Yu, T. P. Purdy, and C. A. Regal
Phys. Rev. Lett. 108, 083603 – Published 23 February 2012
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Abstract

We study the mechanical quality factors of bilayer aluminum–silicon-nitride membranes. By coating ultrahigh-Q Si3N4 membranes with a more lossy metal, we can precisely measure the effect of material loss on Q’s of tensioned resonator modes over a large range of frequencies. We develop a theoretical model that interprets our results and predicts the damping can be reduced significantly by patterning the metal film. Using such patterning, we fabricate Al-Si3N4 membranes with ultrahigh Q at room temperature. Our work elucidates the role of material loss in the Q of membrane resonators and informs the design of hybrid mechanical oscillators for optical-electrical-mechanical quantum interfaces.

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  • Received 11 November 2011

DOI:https://doi.org/10.1103/PhysRevLett.108.083603

© 2012 American Physical Society

Authors & Affiliations

P.-L. Yu, T. P. Purdy, and C. A. Regal

  • JILA, University of Colorado and National Institute of Standards and Technology, and Department of Physics, University of Colorado, Boulder, Colorado 80309, USA

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Issue

Vol. 108, Iss. 8 — 24 February 2012

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