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Disorder-induced transitions in resonantly driven Floquet topological insulators

Paraj Titum, Netanel H. Lindner, and Gil Refael
Phys. Rev. B 96, 054207 – Published 16 August 2017

Abstract

We investigate the effects of disorder in Floquet topological insulators (FTIs) occurring in semiconductor quantum wells. Such FTIs are induced by resonantly driving a transition between the valence and conduction bands. We show that when disorder is added, the topological nature of such FTIs persists as long as there is a mobility gap at the resonant quasienergy. For strong enough disorder, this gap closes and all the states become localized as the system undergoes a transition to a trivial insulator. Interestingly, the effects of disorder are not necessarily adverse: we show that in the same quantum well, disorder can also induce a transition from a trivial to a topological system, thereby establishing a Floquet topological Anderson insulator (FTAI). We identify the conditions on the driving field necessary for observing such a transition.

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  • Received 21 March 2017

DOI:https://doi.org/10.1103/PhysRevB.96.054207

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Paraj Titum1,2, Netanel H. Lindner3, and Gil Refael1

  • 1Institute for Quantum Information and Matter, Caltech, Pasadena, California 91125, USA
  • 2Joint Quantum Institute and Joint Center for Quantum Information and Computer Science, NIST/University of Maryland, College Park, Maryland 20742, USA
  • 3Physics Department, Technion, 320003 Haifa, Israel

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Issue

Vol. 96, Iss. 5 — 1 August 2017

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