Abstract
We have investigated the evolution of the electronic properties of epitaxial films deposited by molecular beam epitaxy (MBE) using x-ray diffraction, x-ray photoemission spectroscopy, Rutherford backscattering spectrometry, x-ray absorption spectroscopy, electrical transport, and ab initio modeling. is an antiferromagnetic insulator, whereas is a metal. Substituting for in effectively dopes holes into the top of valence band, leading to () local electron configurations. Core-level and valence-band features monotonically shift to lower binding energy with increasing , indicating downward movement of the Fermi level toward the valence band maximum. The material becomes a -type semiconductor at lower doping levels and an insulator-to-metal transition is observed at , but only when the films are deposited with in-plane compression via lattice-mismatched heteroepitaxy. Valence-band x-ray photoemission spectroscopy reveals diminution of electronic state density at the -derived top of the valence band, while O K-edge x-ray absorption spectroscopy shows the development of a new unoccupied state above the Fermi level as holes are doped into . The evolution of these bands with Sr concentration is accurately captured using density functional theory (DFT) with a Hubbard U correction of 3.0 eV . Resistivity data in the semiconducting regime do not fit perfectly well to either a polaron hopping or band conduction model but are best interpreted in terms of a hybrid model. The activation energies extracted from these fits are well reproduced by .
- Received 17 October 2014
- Revised 20 January 2015
DOI:https://doi.org/10.1103/PhysRevB.91.155129
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