Hole-induced insulator-to-metal transition in La1xSrxCrO3 epitaxial films

K. H. L. Zhang, Y. Du, P. V. Sushko, M. E. Bowden, V. Shutthanandan, S. Sallis, L. F. J. Piper, and S. A. Chambers
Phys. Rev. B 91, 155129 – Published 20 April 2015
PDFHTMLExport Citation

Abstract

We have investigated the evolution of the electronic properties of La1xSrxCrO3(0x1) epitaxial films deposited by molecular beam epitaxy (MBE) using x-ray diffraction, x-ray photoemission spectroscopy, Rutherford backscattering spectrometry, x-ray absorption spectroscopy, electrical transport, and ab initio modeling. LaCrO3 is an antiferromagnetic insulator, whereas SrCrO3 is a metal. Substituting Sr2+ for La3+ in LaCrO3 effectively dopes holes into the top of valence band, leading to Cr4+ (3d2) local electron configurations. Core-level and valence-band features monotonically shift to lower binding energy with increasing x, indicating downward movement of the Fermi level toward the valence band maximum. The material becomes a p-type semiconductor at lower doping levels and an insulator-to-metal transition is observed at x0.65, but only when the films are deposited with in-plane compression via lattice-mismatched heteroepitaxy. Valence-band x-ray photoemission spectroscopy reveals diminution of electronic state density at the Crdt2g-derived top of the valence band, while O K-edge x-ray absorption spectroscopy shows the development of a new unoccupied state above the Fermi level as holes are doped into LaCrO3. The evolution of these bands with Sr concentration is accurately captured using density functional theory (DFT) with a Hubbard U correction of 3.0 eV (DFT+U). Resistivity data in the semiconducting regime (x0.50) do not fit perfectly well to either a polaron hopping or band conduction model but are best interpreted in terms of a hybrid model. The activation energies extracted from these fits are well reproduced by DFT+U.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 17 October 2014
  • Revised 20 January 2015

DOI:https://doi.org/10.1103/PhysRevB.91.155129

©2015 American Physical Society

Authors & Affiliations

K. H. L. Zhang1,*, Y. Du2, P. V. Sushko1, M. E. Bowden2, V. Shutthanandan2, S. Sallis3, L. F. J. Piper3, and S. A. Chambers1,†

  • 1Physical Sciences Division, Fundamental and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, USA
  • 2Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352, USA
  • 3Department of Materials Science and Engineering, Binghamton University, Binghamton, New York 13902, USA

  • *Present address: Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB2 1TN, UK.
  • Corresponding author: sa.chambers@pnnl.gov

Article Text (Subscription Required)

Click to Expand

Supplemental Material (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 91, Iss. 15 — 15 April 2015

Reuse & Permissions
Access Options
CHORUS

Article Available via CHORUS

Download Accepted Manuscript
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×