Zero-energy modes and gate-tunable gap in graphene on hexagonal boron nitride

M. Kindermann, Bruno Uchoa, and D. L. Miller
Phys. Rev. B 86, 115415 – Published 13 September 2012

Abstract

In this article, we derive an effective theory of graphene on a hexagonal boron nitride (h-BN) substrate. We show that the h-BN substrate generically opens a spectral gap in graphene despite the lattice mismatch. The origin of that gap is particularly intuitive in the regime of strong coupling between graphene and its substrate, when the low-energy physics is determined by the topology of a network of zero-energy modes. For twisted graphene bilayers, where inversion symmetry is present, this network percolates through the system and the spectrum is gapless. The breaking of that symmetry by h-BN causes the zero-energy modes to close into rings. The eigenstates of these rings hybridize into flat bands with gaps in between. The size of this band gap can be tuned by a gate voltage and it can reach the order of magnitude needed to confine electrons at room temperature.

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  • Received 23 May 2012

DOI:https://doi.org/10.1103/PhysRevB.86.115415

©2012 American Physical Society

Authors & Affiliations

M. Kindermann1, Bruno Uchoa2, and D. L. Miller3

  • 1School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
  • 2Department of Physics and Astronomy, University of Oklahoma, Norman, Oklahoma 73069, USA
  • 3National Institute of Standards and Technology, Boulder, Colorado 80305, USA

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Issue

Vol. 86, Iss. 11 — 15 September 2012

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