Spin-current generation from Coulomb-Rashba interaction in semiconductor bilayers

M. M. Glazov, M. A. Semina, S. M. Badalyan, and G. Vignale
Phys. Rev. B 84, 033305 – Published 26 July 2011
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Abstract

Electrons in double-layer semiconductor heterostructures experience a special type of spin-orbit interaction that arises in each layer from the perpendicular component of the Coulomb electric field created by electron-density fluctuations in the other layer. We show that this interaction, acting in combination with the usual spin-orbit interaction, can generate a spin current in one layer when a charge current is driven in the other. This effect is distinct symmetrywise from the spin-Hall drag. The spin current is not, in general, perpendicular to the drive current.

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  • Received 10 June 2011

DOI:https://doi.org/10.1103/PhysRevB.84.033305

©2011 American Physical Society

Authors & Affiliations

M. M. Glazov1, M. A. Semina1, S. M. Badalyan2,3,4, and G. Vignale5

  • 1Ioffe Physical-Technical Institute of the Russian Academy of Sciences, St. Petersburg, 194021 Russia
  • 2School of Physics, Astronomy, and Computational Sciences, George Mason University, Fairfax, Virginia 22030, USA
  • 3Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
  • 4Department of Physics, University of Regensburg, D-93040 Regensburg, Germany
  • 5Department of Physics and Astronomy, University of Missouri, Columbia, Missouri 65211, USA

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Issue

Vol. 84, Iss. 3 — 15 July 2011

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