Effect of Intense Laser Irradiation on the Lattice Stability of Semiconductors and Metals

V. Recoules, J. Clérouin, G. Zérah, P. M. Anglade, and S. Mazevet
Phys. Rev. Lett. 96, 055503 – Published 7 February 2006

Abstract

The effect of intense ultrashort irradiation on interatomic forces, crystal stability, and possible melting transition of the underlying lattice is not completely elucidated. By using ab initio linear response to compute the phonon spectrum of gold, silicon, and aluminum, we found that silicon and gold behave in opposite ways when increasing radiation intensity: whereas a weakening of the silicon bond induces a lattice instability, gold undergoes a sharp increase of its melting temperature, while a significantly smaller effect is observed for aluminum for electronic temperatures up to 6 eV.

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  • Received 4 October 2005

DOI:https://doi.org/10.1103/PhysRevLett.96.055503

©2006 American Physical Society

Authors & Affiliations

V. Recoules1,*, J. Clérouin1, G. Zérah1, P. M. Anglade2, and S. Mazevet3

  • 1Département de Physique Théorique et Appliquée, CEA/DAM Île-de-France BP12, 91680 Bruyères-le-Châtel Cedex, France
  • 2CECAM (Centre Européen de Calcul Atomique et Moléculaire), Ecole Normale Supérieure, 46 Allée d’Italie, 69364 Lyon Cedex 7, France
  • 3Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA

  • *Electronic address: vanina.recoules@cea.fr

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Vol. 96, Iss. 5 — 10 February 2006

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