Influence of MgO overlayers on the electronic states of Fe(001) thin films grown on GaAs(001)

Liu-Niu Tong, Frank Matthes, Martina Müller, Claus M. Schneider, and Chan-Gyu Lee
Phys. Rev. B 77, 064421 – Published 19 February 2008

Abstract

The valence electronic states at the model tunneling junction interface MgOFe(001) system were systematically studied by comparing the spin-resolved photoemission spectroscopy of clean Fe(001) and MgO covered MgOFe(001) surfaces using linearly p-polarized light. For the clean Fe(001) film on GaAs(001), five distinct features including bulk and surface-related transitions are found. The bulk and surface-state transitions are well-accounted for by the direct transition model based on the calculated energy band structure of bcc bulk Fe(001). The previously observed minority feature at a binding energy EB=1.3eV is reinterpreted as a surface roughness associated transition. Upon the MgO adsorption on Fe(001), the surface-state transitions at EB=0.3eV below Fermi energy EF appearing in both the majority and minority spin spectra at low photon energy (18eV to 35eV) were quenched. This is also the first direct experimental evidence of a minority spin surface state located just below the Fermi energy as predicted previously. The bulk states at the MgOFe(001) interface exhibit a layer-dependent modification, i.e., the bulk states in the deeper Fe layer(s) remain unaffected, while the states of Δ5 band symmetry in the Fe layer(s) closest to the MgOFe(001) interface are strongly modified, in contrast to the states of Δ1 symmetry. As a consequence of this interface effect, the “partial spin polarization” at the Fermi level changes sign from negative to positive values as seen in the spin asymmetry spectra at photon energies of 40eV and 60eV. The origin of this spin- and symmetry-dependent modification observed at MgOFe(001) interfaces is discussed.

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  • Received 6 April 2007

DOI:https://doi.org/10.1103/PhysRevB.77.064421

©2008 American Physical Society

Authors & Affiliations

Liu-Niu Tong1,2,3,*, Frank Matthes2, Martina Müller2, Claus M. Schneider2, and Chan-Gyu Lee3

  • 1Anhui Key Laboratory of Metal Materials and Processing, School of Material Science and Engineering, Anhui University of Technology, Ma-An-Shan, 243002, Anhui, China
  • 2Institute of Solid State Research IFF-9, Research Centre Jülich, D-52425 Jülich, Germany
  • 3School of Nano and Advanced Materials Engineering, Changwon National University, 9 Sarim-dong, Changwon, Gyeongnam, 641-773, Korea

  • *Corresponding author. lntong@ahut.edu.cn

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Issue

Vol. 77, Iss. 6 — 1 February 2008

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