Colloquium: Excitons in atomically thin transition metal dichalcogenides

Gang Wang, Alexey Chernikov, Mikhail M. Glazov, Tony F. Heinz, Xavier Marie, Thierry Amand, and Bernhard Urbaszek
Rev. Mod. Phys. 90, 021001 – Published 4 April 2018

Abstract

Atomically thin materials such as graphene and monolayer transition metal dichalcogenides (TMDs) exhibit remarkable physical properties resulting from their reduced dimensionality and crystal symmetry. The family of semiconducting transition metal dichalcogenides is an especially promising platform for fundamental studies of two-dimensional (2D) systems, with potential applications in optoelectronics and valleytronics due to their direct band gap in the monolayer limit and highly efficient light-matter coupling. A crystal lattice with broken inversion symmetry combined with strong spin-orbit interactions leads to a unique combination of the spin and valley degrees of freedom. In addition, the 2D character of the monolayers and weak dielectric screening from the environment yield a significant enhancement of the Coulomb interaction. The resulting formation of bound electron-hole pairs, or excitons, dominates the optical and spin properties of the material. Here recent progress in understanding of the excitonic properties in monolayer TMDs is reviewed and future challenges are laid out. Discussed are the consequences of the strong direct and exchange Coulomb interaction, exciton light-matter coupling, and influence of finite carrier and electron-hole pair densities on the exciton properties in TMDs. Finally, the impact on valley polarization is described and the tuning of the energies and polarization observed in applied electric and magnetic fields is summarized.

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  • Received 20 July 2017

DOI:https://doi.org/10.1103/RevModPhys.90.021001

© 2018 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Gang Wang*

  • Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, France

Alexey Chernikov

  • Department of Physics, University of Regensburg, D-93040 Regensburg, Germany

Mikhail M. Glazov

  • Ioffe Institute, 194021 St. Petersburg, Russia

Tony F. Heinz

  • Department of Applied Physics, Stanford University, Stanford, California 94305, USA and SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA

Xavier Marie, Thierry Amand, and Bernhard Urbaszek

  • Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Av. Rangueil, 31077 Toulouse, France

  • *Present address: G. W. Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom.

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Issue

Vol. 90, Iss. 2 — April - June 2018

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