• Open Access

Large zero bias peaks and dips in a four-terminal thin InAs-Al nanowire device

Huading Song, Zitong Zhang, Dong Pan, Donghao Liu, Zhaoyu Wang, Zhan Cao, Lei Liu, Lianjun Wen, Dunyuan Liao, Ran Zhuo, Dong E. Liu, Runan Shang, Jianhua Zhao, and Hao Zhang
Phys. Rev. Research 4, 033235 – Published 23 September 2022

Abstract

We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous studies, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer subband regime. The four-terminal device design excludes electrode contact resistance, an unknown value, which has inevitably affected previously reported device conductance. Using tunneling spectroscopy, we find large zero bias peaks (ZBPs) in differential conductance on the order of 2e2/h. At specific gate voltage settings, we find a magnetic-field-driven transition between a zero bias peak and a zero bias dip while the zero-bias conductance sticks close to 2e2/h. We discuss a topologically trivial interpretation involving disorder, smooth potential variation and quasi-Majorana zero modes.

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  • Received 26 July 2021
  • Revised 14 August 2022
  • Accepted 6 September 2022

DOI:https://doi.org/10.1103/PhysRevResearch.4.033235

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied PhysicsQuantum Information, Science & Technology

Authors & Affiliations

Huading Song1,2,*, Zitong Zhang1,*, Dong Pan3,*, Donghao Liu1, Zhaoyu Wang1, Zhan Cao2, Lei Liu3, Lianjun Wen3, Dunyuan Liao3, Ran Zhuo3, Dong E. Liu1,2,4, Runan Shang2,†, Jianhua Zhao3,‡, and Hao Zhang1,2,4,§

  • 1State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
  • 2Beijing Academy of Quantum Information Sciences, Beijing 100193, China
  • 3State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China
  • 4Frontier Science Center for Quantum Information, Beijing 100084, China

  • *These authors contributed equally to this work.
  • shangrn@baqis.ac.cn
  • jhzhao@semi.ac.cn
  • §hzquantum@mail.tsinghua.edu.cn

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Vol. 4, Iss. 3 — September - November 2022

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