Abstract
We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous studies, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer subband regime. The four-terminal device design excludes electrode contact resistance, an unknown value, which has inevitably affected previously reported device conductance. Using tunneling spectroscopy, we find large zero bias peaks (ZBPs) in differential conductance on the order of . At specific gate voltage settings, we find a magnetic-field-driven transition between a zero bias peak and a zero bias dip while the zero-bias conductance sticks close to . We discuss a topologically trivial interpretation involving disorder, smooth potential variation and quasi-Majorana zero modes.
14 More- Received 26 July 2021
- Revised 14 August 2022
- Accepted 6 September 2022
DOI:https://doi.org/10.1103/PhysRevResearch.4.033235
Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.
Published by the American Physical Society