• Open Access

Superballistic electron flow through a point contact in a Ga[Al]As heterostructure

Lev V. Ginzburg, Carolin Gold, Marc P. Röösli, Christian Reichl, Matthias Berl, Werner Wegscheider, Thomas Ihn, and Klaus Ensslin
Phys. Rev. Research 3, 023033 – Published 9 April 2021

Abstract

We measure electronic transport through point contacts in a high-mobility electron gas in a Ga[Al]As heterostructure at different temperatures and bulk electron densities. The conductance through all point contacts increases with increasing temperature in a temperature window around T10K for all investigated electron densities and point contact widths. For high electron densities this conductance exceeds the fundamental ballistic limit (Sharvin limit). These observations are in agreement with a viscous electron transport model and previous experiments in graphene.

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  • Received 8 December 2020
  • Revised 10 February 2021
  • Accepted 10 March 2021

DOI:https://doi.org/10.1103/PhysRevResearch.3.023033

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Lev V. Ginzburg*, Carolin Gold, Marc P. Röösli, Christian Reichl, Matthias Berl, Werner Wegscheider, Thomas Ihn, and Klaus Ensslin

  • Department of Physics, ETH Zurich, Otto-Stern-Weg 1, 8093 Zurich, Switzerland

  • *Corresponding author: glev@phys.ethz.ch

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Vol. 3, Iss. 2 — April - June 2021

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