• Open Access

Evidence of attraction between charge carriers in a doped Mott insulator

Emil Blomquist and Johan Carlström
Phys. Rev. Research 3, 013272 – Published 23 March 2021

Abstract

Recent progress in optically trapped ultracold atomic gases is now making it possible to access microscopic observables in doped Mott insulators, which are the parent states of high-temperature superconductors. This makes it possible to address longstanding questions about the temperature scales at which attraction between charge carriers are present, and their mechanism. Controllable theoretical results for this problem are not available at low temperature due to the sign problem. In this work, we make important progress with this problem by employing worm-algorithm Monte Carlo, which allows us to obtain completely unbiased results for two charge carriers in a Mott insulator. Our method gives access to lower temperatures than what is currently possible in experiments, and provides evidence for attraction between dopants at a temperature scale that is now feasible in ultracold atomic systems. We also report on spin correlations in the presence of charge carriers, which are directly comparable to experiments.

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  • Received 12 August 2020
  • Revised 16 December 2020
  • Accepted 25 February 2021

DOI:https://doi.org/10.1103/PhysRevResearch.3.013272

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied PhysicsAtomic, Molecular & Optical

Authors & Affiliations

Emil Blomquist1 and Johan Carlström2

  • 1Department of Physics, Royal Institute of Technology, SE-106 91 Stockholm, Sweden
  • 2Department of Physics, Stockholm University, SE-106 91 Stockholm, Sweden

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Vol. 3, Iss. 1 — March - May 2021

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