Abstract
In ionic Raman scattering, infrared-active phonons mediate a scattering process that results in the creation or destruction of a Raman-active phonon. This mechanism relies on nonlinear interactions between phonons and has in recent years been associated with a variety of emergent lattice-driven phenomena in complex transition-metal oxides, but the underlying mechanism is often obscured by the presence of multiple coupled order parameters in play. Here, we use time-resolved spectroscopy to compare coherent phonons generated by ionic Raman scattering with those created by more conventional electronic Raman scattering on the nonmagnetic and non-strongly-correlated wide-band-gap insulator . We find that the oscillatory amplitude of the low-frequency Raman-active mode exhibits a sharp peak when we tune our pump frequency into resonance with the high-frequency infrared-active mode, consistent with first-principles calculations. Our results suggest that ionic Raman scattering can strongly dominate electronic Raman scattering in wide-band-gap insulating materials. We also see evidence of competing scattering channels at fluences above that alter the measured amplitude of the coherent phonon response.
- Received 30 October 2020
- Revised 20 January 2021
- Accepted 25 January 2021
DOI:https://doi.org/10.1103/PhysRevResearch.3.013126
Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.
Published by the American Physical Society