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Comparison of coherent phonon generation by electronic and ionic Raman scattering in LaAlO3

Martin J. Neugebauer, Dominik M. Juraschek, Matteo Savoini, Pascal Engeler, Larissa Boie, Elsa Abreu, Nicola A. Spaldin, and Steven L. Johnson
Phys. Rev. Research 3, 013126 – Published 10 February 2021

Abstract

In ionic Raman scattering, infrared-active phonons mediate a scattering process that results in the creation or destruction of a Raman-active phonon. This mechanism relies on nonlinear interactions between phonons and has in recent years been associated with a variety of emergent lattice-driven phenomena in complex transition-metal oxides, but the underlying mechanism is often obscured by the presence of multiple coupled order parameters in play. Here, we use time-resolved spectroscopy to compare coherent phonons generated by ionic Raman scattering with those created by more conventional electronic Raman scattering on the nonmagnetic and non-strongly-correlated wide-band-gap insulator LaAlO3. We find that the oscillatory amplitude of the low-frequency Raman-active Eg mode exhibits a sharp peak when we tune our pump frequency into resonance with the high-frequency infrared-active Eu mode, consistent with first-principles calculations. Our results suggest that ionic Raman scattering can strongly dominate electronic Raman scattering in wide-band-gap insulating materials. We also see evidence of competing scattering channels at fluences above 28mJ/cm2 that alter the measured amplitude of the coherent phonon response.

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  • Received 30 October 2020
  • Revised 20 January 2021
  • Accepted 25 January 2021

DOI:https://doi.org/10.1103/PhysRevResearch.3.013126

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Martin J. Neugebauer1, Dominik M. Juraschek2,3, Matteo Savoini1, Pascal Engeler3, Larissa Boie1, Elsa Abreu1, Nicola A. Spaldin3, and Steven L. Johnson1,4,*

  • 1Institute for Quantum Electronics, Physics Department, ETH Zurich, CH-8093 Zurich, Switzerland
  • 2Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
  • 3Department of Materials, ETH Zurich, CH-8093 Zurich, Switzerland
  • 4SwissFEL, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland

  • *johnson@phys.ethz.ch

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Vol. 3, Iss. 1 — February - April 2021

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