• Open Access

Reduced phase space of heat-carrying acoustic phonons in single-crystalline InTe

Shantanu Misra, Céline Barreteau, Jean-Claude Crivello, Valentina M. Giordano, John-Paul Castellan, Yvan Sidis, Petr Levinský, Jiří Hejtmánek, Bernard Malaman, Anne Dauscher, Bertrand Lenoir, Christophe Candolfi, and Stéphane Pailhès
Phys. Rev. Research 2, 043371 – Published 14 December 2020

Abstract

Chalcogenide semiconductors and semimetals are a fertile class of efficient thermoelectric materials, which, in most cases, exhibit very low lattice thermal conductivity κph despite lacking a complex crystal structure such as the tetragonal binary compound InTe. Our measurements of κph(T) in single-crystalline InTe along the c axis show that κph exhibits a smooth temperature dependence upon cooling to about 50 K, the temperature below which a strong rise typical for dielectric compounds is observed. Using a combination of first-principles calculations, inelastic neutron scattering (INS), and low-temperature specific heat and transport properties measurements on single-crystalline InTe, we show that the phonon spectrum exhibits well-defined acoustic modes, the energy dispersions of which are constrained to low energies due to distributions of dispersionless, optical modes, which are responsible for a broad double peak structure in the low-temperature specific heat. The latter are assigned to the dynamics of In+ cations in tunnels formed by edge-sharing (In3+Te42) tetrahedra chains, the atomic thermal displacement parameters of which, probed as a function of temperature by means of single-crystal x-ray diffraction, suggest the existence of a complex energy potential. Indeed, the In+-weighted optical modes are not observed by INS, which is ascribed to the anharmonic broadening of their energy profiles. While the low κph value of 1.2Wm1K1 at 300 K originates from the limited energy range available for acoustic phonons, we show that the underlying mechanism is specific to InTe and argue that it is likely related to the presence of local disorder induced by the In+ site occupancy.

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  • Received 30 June 2020
  • Revised 25 September 2020
  • Accepted 12 November 2020

DOI:https://doi.org/10.1103/PhysRevResearch.2.043371

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Shantanu Misra1, Céline Barreteau2, Jean-Claude Crivello2, Valentina M. Giordano3, John-Paul Castellan4,5, Yvan Sidis4, Petr Levinský6, Jiří Hejtmánek6, Bernard Malaman1, Anne Dauscher1, Bertrand Lenoir1, Christophe Candolfi1,*, and Stéphane Pailhès3,*

  • 1Institut Jean Lamour, UMR 7198 CNRS – Université de Lorraine, Campus ARTEM, 2 allée André Guinier, BP 50840, 54011 Nancy, France
  • 2Univ Paris Est Creteil, CNRS, ICMPE, UMR 7182, 2 rue Henri Dunant, 94320 Thiais, France
  • 3Institute of Light and Matter, UMR 5306 Université Lyon 1-CNRS, Université de Lyon 69622 Villeurbanne Cedex, France
  • 4Université Paris-Saclay, CNRS, CEA, Laboratoire Léon Brillouin, 91191 Gif-sur-Yvette, France
  • 5Institut für Festkörperphysik, Karlsruher Institut für Technologie, D-76021 Karlsruhe, Germany
  • 6Institute of Physics, Czech Academy of Sciences, Cukrovarnická 10, 162 00 Praha 6, Czech Republic

  • *Corresponding authors: christophe.candolfi@univ-lorraine.fr; stephane.pailhes@univ-lyon1.fr

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Vol. 2, Iss. 4 — December - December 2020

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