• Open Access

Stabilization of antiferromagnetism in 1T-Fe0.05TaS2

Q. Niu, W. Zhang, Y. T. Chan, E. C. T. O'Farrell, R. Doganov, K. Y. Yip, Kwing To Lai, W. C. Yu, B. Özyilmaz, G. R. Stewart, J. S. Kim, and Swee K. Goh
Phys. Rev. Research 2, 023297 – Published 5 June 2020

Abstract

1T-TaS2 is a prototypical charge-density-wave system with a Mott insulating ground state. Usually, a Mott insulator is accompanied by an antiferromagnetic state. However, the antiferromagnetic order had never been observed in 1T-TaS2. Here, we report the stabilization of the antiferromagnetic order by the intercalation of a small amount of Fe into the van der Waals gap of 1T-TaS2, i.e., forming 1T-Fe0.05TaS2. Upon cooling from 300 K, the electrical resistivity increases with a decreasing temperature before reaching a maximum value at around 15 K, which is close to the Néel temperature determined from our magnetic susceptibility measurement. The antiferromagnetic state can be fully suppressed when the sample thickness is reduced, indicating that the antiferromagnetic order in Fe0.05TaS2 has a non-negligible three-dimensional character. For the bulk Fe0.05TaS2, a comparison of our high pressure electrical transport data with that of 1T-TaS2 indicates that, at ambient pressure, Fe0.05TaS2 is in the nearly commensurate charge-density-wave phase near the border of the Mott insulating state. The temperature-pressure phase diagram thus reveals an interesting decoupling of the antiferromagnetism from the Mott insulating state.

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  • Received 14 January 2020
  • Revised 8 May 2020
  • Accepted 12 May 2020
  • Corrected 12 July 2021

DOI:https://doi.org/10.1103/PhysRevResearch.2.023297

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Corrections

12 July 2021

Correction: A support statement in the Acknowledgment section was missing information and has been fixed.

Authors & Affiliations

Q. Niu1,*, W. Zhang1,*, Y. T. Chan1, E. C. T. O'Farrell2, R. Doganov2, K. Y. Yip1, Kwing To Lai1, W. C. Yu3, B. Özyilmaz2, G. R. Stewart4, J. S. Kim4, and Swee K. Goh1,†

  • 1Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong
  • 2Department of Physics, National University of Singapore, Singapore
  • 3Department of Physics, City University of Hong Kong, Kowloon, Hong Kong
  • 4Department of Physics, University of Florida, Gainesville, Florida 32611-8440, USA

  • *These authors contributed equally to this work.
  • skgoh@cuhk.edu.hk

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Vol. 2, Iss. 2 — June - August 2020

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