• Open Access

Single spin resonance driven by electric modulation of the g-factor anisotropy

A. Ferrón, S. A. Rodríguez, S. S. Gómez, J. L. Lado, and J. Fernández-Rossier
Phys. Rev. Research 1, 033185 – Published 18 December 2019

Abstract

We address the problem of electronic and nuclear spin resonance of an individual atom on a surface driven by a scanning tunneling microscope. Several mechanisms have been proposed so far, some of them based on the modulation of exchange and crystal field associated with a piezoelectric displacement of the adatom driven by the radio frequency (RF) tip electric field. Here we consider another mechanism, where the piezoelectric displacement modulates the g-factor anisotropy, leading both to electronic and nuclear spin flip transitions. We discuss thoroughly the cases of hydrogenated Ti (S=1/2) and Fe (S=2) on MgO, relevant for recent experiments. We model the system using two approaches. First, an analytical model that includes crystal field, spin orbit coupling, and hyperfine interactions. Second, we carry out density-functional-based calculations. We find that the modulation of the anisotropy of the g tensor due to the piezoelectric displacement of the atom is an additional mechanism for scanning tunneling microscopy (STM)-based single spin resonance that would be effective in S=1/2 adatoms with large spin orbit coupling. In the case of hydrogenated Ti on MgO, we predict a modulation spin resonance frequency driven by the DC electric field of the tip.

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  • Received 20 September 2019
  • Revised 12 November 2019

DOI:https://doi.org/10.1103/PhysRevResearch.1.033185

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

A. Ferrón1,*, S. A. Rodríguez1, S. S. Gómez1, J. L. Lado2, and J. Fernández-Rossier3,†

  • 1Instituto de Modelado e Innovación Tecnológica (CONICET-UNNE) and Facultad de Ciencias Exactas, Naturales y Agrimensura, Universidad Nacional del Nordeste, Avenida Libertad 5400, W3404AAS Corrientes, Argentina
  • 2Department of Applied Physics, Aalto University, Espoo, Finland
  • 3QuantaLab, International Iberian Nanotechnology Laboratory (INL), Avenida Mestre José Veiga, 4715-330 Braga, Portugal

  • *Corresponding author: aferron@gmail.com
  • On leave from Departamento de Fisica Aplicada, Universidad de Alicante, 03690, Spain.

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Vol. 1, Iss. 3 — December - December 2019

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