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Realization of efficient tuning of the Fermi level in iron-based ferrimagnetic alloys

N. Yamashita, E. Shigematsu, S. Honda, R. Ohshima, M. Shiraishi, and Y. Ando
Phys. Rev. Materials 6, 104405 – Published 12 October 2022
Physics logo See synopsis: A Ferromagnet That Easily Sheds Spins
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Abstract

The Stoner criterion allows only three single elements possessing room-temperature (RT) ferromagnetism: cobalt (Co), nickel (Ni), and iron (Fe). Although these three elements have played central roles in magnetism-based materials, their large work function (4.55.2eV) is becoming a non-negligible obstacle for realization of spin devices using nonmetallic materials with finite energy gaps, because injection of electron spins into these nonmetallic materials is strongly hampered due to the large Schottky barrier height. Hence, a novel ferromagnetic or ferrimagnetic material simultaneously possessing RT ferromagnetism or ferrimagnetism and high Fermi energy is strongly required. Here, we show that an Fe-based alloy, iron-gadolinium (FeGd), allows circumvention of the obstacle. Surprisingly, only 20% of Gd incorporation in Fe dramatically modulates the Fermi energy from −4.8 to −3.0 eV, which is the largest modulation in all metallic alloys reported thus far. The coexistence of ferrimagnetism and nonzero spin polarization at RT of FeGd supports its abundant potential for future applications in low-carrier-density materials such as monolayer, organic, and nondegenerate inorganic semiconductors.

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  • Received 8 October 2021
  • Accepted 8 September 2022

DOI:https://doi.org/10.1103/PhysRevMaterials.6.104405

©2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

synopsis

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A Ferromagnet That Easily Sheds Spins

Published 12 October 2022

Researchers demonstrate room-temperature spin transfer across an interface between an iron-based ferromagnet and a semiconductor, opening a route to creating novel spintronic devices.

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Authors & Affiliations

N. Yamashita1,*, E. Shigematsu1, S. Honda2, R. Ohshima1, M. Shiraishi1, and Y. Ando1,3,†

  • 1Department of Electronic Science and Engineering, Kyoto University, Kyoto, Kyoto, 615–8510, Japan
  • 2Department of Pure and Applied Physics, Kansai University, Suita, Osaka, 564–8680, Japan
  • 3PRESTO, Japan Science and Technology Agency, Honcho, Kawaguchi, Saitama 332–0012, Japan

  • *Present address: Faculty of Information Science and Electrical Engineering, Kyushu University, Fukuoka, Fukuoka, 819–0395, Japan.
  • ando.yuichiro.5s@kyoto-u.ac.jp

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Issue

Vol. 6, Iss. 10 — October 2022

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