Anisotropic magnetotransport in the layered antiferromagnet TaFe1.25Te3

Rajeswari Roy Chowdhury, Samik DuttaGupta, Chandan Patra, Anshu Kataria, Shunsuke Fukami, and Ravi Prakash Singh
Phys. Rev. Materials 6, 084408 – Published 12 August 2022

Abstract

The discovery of fascinating ways to control and manipulate antiferromagnetic materials have garnered considerable attention as an attractive platform to explore novel spintronic phenomena and functionalities. Layered antiferromagnets (AFMs) exhibiting interesting magnetic structures can serve as an attractive starting point to establish novel functionalities down to the two-dimensional limit. In this work, we explore the magnetoresistive properties of the spin-ladder AFM TaFe1.25Te3. Magnetization studies reveal an anisotropic magnetic behavior resulting in the stabilization of a spin-flop configuration for H (10-1) plane (i.e., out-of-plane direction). Angle-dependent longitudinal and transverse magnetoresistances show an unusual anharmonic behavior. A significant anisotropic enhancement of magnetoresistance when H (10-1) plane compared to H|| (10-1) directions has been observed. The present results deepen our understanding of the magnetoresistive properties of low-dimensional layered AFMs, and point towards the possibility of utilizing these novel material systems for antiferromagnetic spintronics.

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  • Received 15 April 2022
  • Accepted 20 July 2022

DOI:https://doi.org/10.1103/PhysRevMaterials.6.084408

©2022 American Physical Society

Physics Subject Headings (PhySH)

  1. Research Areas
Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Rajeswari Roy Chowdhury1,*, Samik DuttaGupta2,3, Chandan Patra1, Anshu Kataria1, Shunsuke Fukami2,3,4,5,6, and Ravi Prakash Singh1,†

  • 1Department of Physics, Indian Institute of Science Education and Research Bhopal, Bhopal Bypass Road, Bhauri, Madhya Pradesh 462066, India
  • 2Center for Science and Innovation in Spintronics, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • 3Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • 4Center for Innovative Integrated Electronic Systems, Tohoku University, 468-1 Aramaki Aza Aoba, Aoba-ku, Sendai 980-0845, Japan
  • 5WPI-Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
  • 6Inamori Research Institute for Science, Shijo, Shimogyo-ku, Kyoto 600-8411, Japan

  • *rajeswari@iiserb.ac.in
  • rpsingh@iiserb.ac.in

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Vol. 6, Iss. 8 — August 2022

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