Rhombic Fermi surfaces in a ferromagnetic MnGa thin film with perpendicular magnetic anisotropy

M. Kobayashi, N. H. D. Khang, T. Takeda, K. Araki, R. Okano, M. Suzuki, K. Kuroda, K. Yaji, K. Sugawara, S. Souma, K. Nakayama, K. Yamauchi, M. Kitamura, K. Horiba, A. Fujimori, T. Sato, S. Shin, M. Tanaka, and P. N. Hai
Phys. Rev. Materials 6, 074403 – Published 15 July 2022

Abstract

Mn1xGax (MnGa) with the L10 structure is a ferromagnetic material with strong perpendicular magnetocrystalline anisotropy. Although MnGa thin films have been successfully grown epitaxially and studied for various spintronics devices, fundamental understandings of its electronic structure are still lacking. To address this issue, we have investigated L10-MnGa thin films using angle-resolved photoemission spectroscopy (ARPES). We have observed a large Fermi surface with a rhombic shape in the kxky plane overlapping neighboring Fermi surfaces. The kz dependence of the band structure suggests that the band dispersion observed by ARPES comes from the three-dimensional band structure of MnGa folded by a 2×2 reconstruction. The band dispersion across the corner of the rhombic Fermi surface forms an electron pocket with a weak kz dependence. The effective mass and the mobility of the bands crossing the Fermi level near the corner are estimated from the ARPES images. Based on the experimental findings, the relationship between the observed band structure and the spin-dependent properties in MnGa-based heterostructures is discussed.

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  • Received 1 March 2022
  • Revised 4 June 2022
  • Accepted 22 June 2022

DOI:https://doi.org/10.1103/PhysRevMaterials.6.074403

©2022 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

M. Kobayashi1,2,*, N. H. D. Khang3, T. Takeda1, K. Araki1, R. Okano1, M. Suzuki4, K. Kuroda5, K. Yaji6, K. Sugawara7,8,9,10, S. Souma8,9, K. Nakayama7,10, K. Yamauchi11, M. Kitamura12, K. Horiba12, A. Fujimori4,13, T. Sato7,8,9, S. Shin5, M. Tanaka1,2, and P. N. Hai2,3,†

  • 1Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • 2Center for Spintronic Research Network, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
  • 3Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033, Japan
  • 4Department of Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
  • 5Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
  • 6Research Center for Advanced Measurement and Characterization, National Institute for Materials Science, Ibaraki 305-0003, Japan
  • 7Department of Physics, Tohoku University, Sendai 980-8577, Japan
  • 8Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan
  • 9Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan
  • 10PRESTO, JST, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
  • 11Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan
  • 12Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), 1-1 Oho, Tsukuba 305-0801, Japan
  • 13Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan

  • *masaki.kobayashi@ee.t.u-tokyo.ac.jp
  • pham.n.ab@m.titech.ac.jp

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Vol. 6, Iss. 7 — July 2022

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