Abstract
In this Letter, we demonstrate that it is possible to form a two-dimensional (2D) silicenelike compound by replacing the Si atoms occupying on-top sites in the planarlike structure of epitaxial silicene on (0001) by deposited Ge atoms. For coverages below 1/6 monolayer, the Ge deposition gives rise to a alloy (with between 0 and 1) in which the on-top sites are randomly occupied by Si or Ge atoms. The progressive increase of the valence band maximum with observed experimentally originates from a selective charge transfer from Ge atoms to Si atoms. These achievements provide evidence for the possibility of engineering the band structure in 2D SiGe alloys in a way that is similar for their bulk counterpart.
- Received 26 February 2020
- Revised 16 October 2020
- Accepted 8 December 2020
DOI:https://doi.org/10.1103/PhysRevMaterials.5.L011001
Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.
Published by the American Physical Society