Abstract
We study magnetic and magnetotransport properties of an epitaxial interfacial multiferroic system consisting of a ferromagnetic Heusler-alloy and a ferroelectric-oxide . -ordered epilayers on show an in-plane uniaxial magnetic anisotropy with strong temperature dependence, induced by the presence of the magnetoelastic effect via the spin-orbit interaction at the interface. In the Hall-bar devices, the anisotropic magnetoresistance (AMR) hysteretic curves depending on in-plane magnetization reversal processes on the and domains of are clearly observed at room temperature. Notably, the magnitude of the AMR ratio (%) for Hall-bar devices can be tuned through the domain wall motion of by applying electric fields. We propose that the tunable AMR effect is associated with the modulation of the spin-orbit interaction, exchange interaction, and/or the electronic band structure near the Fermi level by applying electric fields in the epitaxial interfacial multiferroic system.
- Received 31 March 2020
- Revised 25 October 2020
- Accepted 6 January 2021
DOI:https://doi.org/10.1103/PhysRevMaterials.5.014412
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