Electronic structure of the high-mobility two-dimensional antiferromagnetic metal GdTe3

J. S. Liu, S. C. Huan, Z. H. Liu, W. L. Liu, Z. T. Liu, X. L. Lu, Z. Huang, Z. C. Jiang, X. Wang, N. Yu, Z. Q. Zou, Y. F. Guo, and D. W. Shen
Phys. Rev. Materials 4, 114005 – Published 12 November 2020

Abstract

The newfound two-dimensional antiferromagnetic GdTe3 has great potential in novel magnetic twistronic and spintronic devices because it has the highest carrier mobility among all known layered magnetic materials. Here, we used high-resolution angle-resolved photoemission spectroscopy to investigate its Fermi-surface topology and low-lying electronic band structure. The Fermi surface is partially gapped by charge-density waves below the transition temperature. Very steep and nearly linear band dispersion near the Fermi energy contributes to the high carrier mobility in GdTe3. We find that the scattering rate of the quasiparticle increases linearly as a function of binding energy within a wide energy range, indicating that GdTe3 is a non-Fermi-liquid metal. Our results in this paper provide a fundamental understanding of this layered antiferromagnetic material to guide future studies on it.

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  • Received 6 August 2020
  • Revised 20 October 2020
  • Accepted 26 October 2020

DOI:https://doi.org/10.1103/PhysRevMaterials.4.114005

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

J. S. Liu1,2,*, S. C. Huan3,*, Z. H. Liu1,2, W. L. Liu1, Z. T. Liu1, X. L. Lu1, Z. Huang1, Z. C. Jiang1, X. Wang3,4, N. Yu3,4, Z. Q. Zou3,4, Y. F. Guo3,†, and D. W. Shen1,2,‡

  • 1Center for Excellence in Superconducting Electronics, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
  • 4Analytical Instrumentation Center, School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China

  • *These authors contributed equally to this work.
  • guoyf@shanghaitech.edu.cn
  • dwshen@mail.sim.ac.cn

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Vol. 4, Iss. 11 — November 2020

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