Abstract
We report a systematic study on the growth conditions of thin films by molecular beam epitaxy for maximization of superconducting transition temperature . Careful tuning of the flux ratios of Sn, In, and Te enables us to find an optimum condition for substituting rich In content into the Sn site in a single phase of beyond the bulk solubility limit at ambient pressure . shows a dome-shaped dependence on In content with the highest at , being consistent to that reported for bulk crystals. The well-regulated films can be a useful platform to study possible topological superconductivity by integrating them into the state-of-the-art junctions and/or proximity-coupled devices.
- Received 7 May 2020
- Accepted 9 September 2020
DOI:https://doi.org/10.1103/PhysRevMaterials.4.091202
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