Abstract
We fabricated spin-polarized surface electronic states with tunable Fermi levels from a semiconductor to low-dimensional metal in the Bi/GaSb(110)- surface using angle-resolved photoelectron spectroscopy (ARPES) and spin-resolved ARPES. The spin-polarized surface band of Bi/GaSb(110) exhibits quasi-one-dimensional character with the Rashba parameter of 4.1 and 2.6 eVÅ at the and points of the surface Brillouin zone, respectively. The Fermi level of the surface electronic state is tuned in situ by element-selective Ar-ion sputtering on the GaSb substrate. The giant Rashba-type spin splitting with switchable metallic/semiconducting character on a semiconductor substrate makes this system a promising candidate for future research in low-dimensional spintronic phenomena.
- Received 29 September 2019
DOI:https://doi.org/10.1103/PhysRevMaterials.3.126001
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