Abstract
When it comes to providing the unusual combination of optical transparency, -type conductivity, and relatively high mobility, -based oxides are promising candidates. Epitaxial films of the simplest oxide, SnO, are grown in an adsorption-controlled regime at on substrates by molecular-beam epitaxy, where the excess volatile desorbs from the film surface. A commensurately strained monolayer and an accompanying van der Waals gap is observed near the substrate interface, promoting layers with high structural perfection notwithstanding a large epitaxial lattice mismatch (). The unintentionally doped films exhibit -type conductivity with carrier concentration and mobility at room temperature. Additional physical properties are measured and linked to the valence state and corresponding lone-pair charge-density distribution.
- Received 28 May 2019
DOI:https://doi.org/10.1103/PhysRevMaterials.3.105202
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