Comprehensive study of the low-temperature transport properties of polycrystalline Sn1+xTe (x=0 and 0.03)

Dorra Ibrahim, Christophe Candolfi, Sylvie Migot, Jaafar Ghanbaja, Anne Dauscher, Gérard Le Caër, Bernard Malaman, Christopher Semprimoschnig, and Bertrand Lenoir
Phys. Rev. Materials 3, 085404 – Published 20 August 2019
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Abstract

We report a detailed investigation of the low-temperature transport properties (5–300 K) on polycrystalline samples of Sn1+xTe (x=0 and 0.03) prepared by melt quenching in water and slow cooling. These two different synthetic routes result in variations in the hole concentration over more than one order of magnitude, allowing for a systematic investigation of the influence of Sn vacancies on the transport properties. The results evidence a strong correlation between the details of the synthetic process and the concentration of Sn vacancies. Transmission electron microscopy and Mössbauer spectroscopy show that the excess Sn, which helps to lower the hole concentration, segregates at grain boundaries. Interestingly, Hall-effect measurements reveal that charge transport is dominated near 300 K by alloy scattering regardless of the hole concentration. In addition to dictating the electronic properties, the concentration of Sn vacancies has also a significant impact on the thermal transport, with the magnitude of the low-temperature Umklapp peak observed in the lattice thermal conductivity near 30 K scaling with the concentration of Sn vacancies that act as efficient point-defect scatterers.

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  • Received 30 April 2019
  • Revised 3 July 2019

DOI:https://doi.org/10.1103/PhysRevMaterials.3.085404

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Dorra Ibrahim1, Christophe Candolfi1,*, Sylvie Migot1, Jaafar Ghanbaja1, Anne Dauscher1, Gérard Le Caër2, Bernard Malaman1, Christopher Semprimoschnig3, and Bertrand Lenoir1,†

  • 1Institut Jean Lamour, UMR 7198 CNRS – Université de Lorraine, 2 allée André Guinier-Campus ARTEM, BP 50840, 54011 Nancy Cedex, France
  • 2Institut de Physique de Rennes, UMR UR1-CNRS 6251, Universite de Rennes I, Campus de Beaulieu, 35042 Rennes Cedex, France
  • 3European Space Agency, ESTEC, P.O. Box 299, Keplerlaan 1, 2200 AG Noordwijk, The Netherlands

  • *christophe.candolfi@univ-lorraine.fr
  • bertrand.lenoir@univ-lorraine.fr

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Issue

Vol. 3, Iss. 8 — August 2019

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