Effects of field annealing on MnN/CoFeB exchange bias systems

P. Quarterman, I. Hallsteinsen, M. Dunz, M. Meinert, E. Arenholz, J. A. Borchers, and A. J. Grutter
Phys. Rev. Materials 3, 064413 – Published 24 June 2019
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Abstract

We report the effects of nitrogen diffusion on exchange bias in MnN/CoFeB heterostructures as a function of MnN thickness and field-annealing temperature. We find that competing effects occur in which high-temperature annealing enhances exchange bias in heterostructures with thick MnN through improved crystallinity, but in thinner samples this annealing ultimately eliminates the exchange bias due to nitrogen deficiency. Using polarized neutron reflectometry and magnetic x-ray spectroscopy, we directly observe increasing amounts of nitrogen migration from MnN into the underlying Ta seed layer with increased annealing temperature. In heterostructures with thin MnN layers, the resulting nitrogen deficiency becomes significant enough to alter the antiferromagnetic state before the Ta seed layer is nitrogen saturated. Furthermore, we observe intermixing at the MnN/CoFeB interface which is attributed to the nitrogen deficiency creating vacancies in the MnN layer after annealing in a field. This intermixing of Mn with Co and Fe is not believed to be the cause for loss of exchange bias when the MnN layer is too thin but is instead a secondary effect due to increased vacancies after nitrogen migration.

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  • Received 1 April 2019
  • Revised 22 May 2019

DOI:https://doi.org/10.1103/PhysRevMaterials.3.064413

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied PhysicsAccelerators & Beams

Authors & Affiliations

P. Quarterman1,*, I. Hallsteinsen2,3, M. Dunz4, M. Meinert4, E. Arenholz2,5, J. A. Borchers1, and A. J. Grutter1

  • 1NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
  • 2Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 3Department of Electronic systems, Norwegian University of Science and Technology – NTNU, 7491 Trondheim, Norway
  • 4Center for Spinelectronic Materials and Devices, Department of Physics, Bielefeld University, D-33501 Bielefeld, Germany
  • 5Cornell High Energy Synchrotron Source, Cornell University, Ithaca, New York 14853, USA

  • *patrick.quarterman@nist.gov

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Issue

Vol. 3, Iss. 6 — June 2019

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