Theoretical study of scattering in graphene ribbons in the presence of structural and atomistic edge roughness

Kristof Moors, Antonino Contino, Maarten L. Van de Put, William G. Vandenberghe, Massimo V. Fischetti, Wim Magnus, and Bart Sorée
Phys. Rev. Materials 3, 024001 – Published 6 February 2019

Abstract

We investigate the diffusive electron-transport properties of charge-doped graphene ribbons and nanoribbons with imperfect edges. We consider different regimes of edge scattering, ranging from wide graphene ribbons with (partially) diffusive edge scattering to ribbons with large width variations and nanoribbons with atomistic edge roughness. For the latter, we introduce an approach based on pseudopotentials, allowing for an atomistic treatment of the band structure and the scattering potential, on the self-consistent solution of the Boltzmann transport equation within the relaxation-time approximation and taking into account the edge-roughness properties and statistics. The resulting resistivity depends strongly on the ribbon orientation, with zigzag (armchair) ribbons showing the smallest (largest) resistivity and intermediate ribbon orientations exhibiting intermediate resistivity values. The results also show clear resistivity peaks, corresponding to peaks in the density of states due to the confinement-induced subband quantization, except for armchair-edge ribbons that show a very strong width dependence because of their claromatic behavior. Furthermore, we identify a strong interplay between the relative position of the two valleys of graphene along the transport direction, the correlation profile of the atomistic edge roughness, and the chiral valley modes, leading to a peculiar strongly suppressed resistivity regime, most pronounced for the zigzag orientation.

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  • Received 26 July 2018
  • Revised 4 October 2018

DOI:https://doi.org/10.1103/PhysRevMaterials.3.024001

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Kristof Moors1,*, Antonino Contino2,3, Maarten L. Van de Put4, William G. Vandenberghe4, Massimo V. Fischetti4, Wim Magnus3,5, and Bart Sorée3,5,2

  • 1Physics and Materials Science Research Unit, University of Luxembourg, Avenue de la Faïencerie 162a, L-1511 Luxembourg, Luxembourg
  • 2Electrical Engineering (ESAT) Department, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven, Belgium
  • 3imec, Kapeldreef 75, B-3001 Leuven, Belgium
  • 4Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA
  • 5Physics Department, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium

  • *kristof.moors@uni.lu

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Vol. 3, Iss. 2 — February 2019

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