Real-space study of the optical absorption in alternative phases of silicon

Chin Shen Ong, Sinisa Coh, Marvin L. Cohen, and Steven G. Louie
Phys. Rev. Materials 1, 075408 – Published 27 December 2017

Abstract

We introduce a real-space approach to understand the relationship between optical absorption and crystal structure. We apply this approach to alternative phases of silicon, with a focus on the Si20 crystal phase as a case study. We find that about 83% of the changes in the calculated low-energy absorption in Si20 as compared to Si in the diamond structure can be attributed to reducing the differences between the on-site energies of the bonding and antibonding orbitals as well as increasing the hopping integrals for specific Si-Si bonds.

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  • Received 29 June 2017

DOI:https://doi.org/10.1103/PhysRevMaterials.1.075408

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Chin Shen Ong1, Sinisa Coh1,2, Marvin L. Cohen1, and Steven G. Louie1,*

  • 1Department of Physics, University of California at Berkeley and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
  • 2Materials Science and Engineering, Mechanical Engineering, University of California Riverside, Riverside, California 92521, USA

  • *sglouie@berkeley.edu

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Issue

Vol. 1, Iss. 7 — December 2017

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