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Predictive modeling of nanoscale domain morphology in solution-processed organic thin films

Cyrus Schaaf, Michael Jenkins, Robell Morehouse, Dane Stanfield, Stephen McDowall, Brad L. Johnson, and David L. Patrick
Phys. Rev. Materials 1, 043404 – Published 11 September 2017
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Abstract

The electronic and optoelectronic properties of molecular semiconductor thin films are directly linked to their extrinsic nanoscale structural characteristics such as domain size and spatial distributions. In films prepared by common solution-phase deposition techniques such as spin casting and solvent-based printing, morphology is governed by a complex interrelated set of thermodynamic and kinetic factors that classical models fail to adequately capture, leaving them unable to provide much insight, let alone predictive design guidance for tailoring films with specific nanostructural characteristics. Here we introduce a comprehensive treatment of solution-based film formation enabling quantitative prediction of domain formation rates, coverage, and spacing statistics based on a small number of experimentally measureable parameters. The model combines a mean-field rate equation treatment of monomer aggregation kinetics with classical nucleation theory and a supersaturation-dependent critical nucleus size to solve for the quasi-two-dimensional temporally and spatially varying monomer concentration, nucleation rate, and other properties. Excellent agreement is observed with measured nucleation densities and interdomain radial distribution functions in polycrystalline tetracene films. Numerical solutions lead to a set of general design rules enabling predictive morphological control in solution-processed molecular crystalline films.

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  • Received 21 May 2017

DOI:https://doi.org/10.1103/PhysRevMaterials.1.043404

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Cyrus Schaaf1, Michael Jenkins1, Robell Morehouse1, Dane Stanfield1, Stephen McDowall2, Brad L. Johnson3, and David L. Patrick1,*

  • 1Department of Chemistry, Western Washington University, 516 High Street, Bellingham, Washington 98225, USA
  • 2Department of Mathematics, Western Washington University, 516 High Street, Bellingham, Washington 98225, USA
  • 3Department of Physics, Western Washington University, 516 High Street, Bellingham, Washington 98225, USA

  • *Corresponding author: david.patrick@wwu.edu

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Issue

Vol. 1, Iss. 4 — September 2017

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