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Correlated electron-hole mechanism for molecular doping in organic semiconductors

Jing Li, Gabriele D'Avino, Anton Pershin, Denis Jacquemin, Ivan Duchemin, David Beljonne, and Xavier Blase
Phys. Rev. Materials 1, 025602 – Published 12 July 2017

Abstract

The electronic and optical properties of the paradigmatic F4TCNQ-doped pentacene in the low-doping limit are investigated by a combination of state-of-the-art many-body ab initio methods accounting for environmental screening effects, and a carefully parametrized model Hamiltonian. We demonstrate that while the acceptor level lies very deep in the gap, the inclusion of electron-hole interactions strongly stabilizes dopant-semiconductor charge transfer states and, together with spin statistics and structural relaxation effects, rationalize the possibility for room-temperature dopant ionization. Our findings reconcile available experimental data, shedding light on the partial vs. full charge transfer scenario discussed in the literature, and question the relevance of the standard classification in shallow or deep impurity levels prevailing for inorganic semiconductors.

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  • Received 9 December 2016
  • Revised 12 April 2017

DOI:https://doi.org/10.1103/PhysRevMaterials.1.025602

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Jing Li1, Gabriele D'Avino1,2,*, Anton Pershin2, Denis Jacquemin3,4, Ivan Duchemin5, David Beljonne2, and Xavier Blase1,†

  • 1Grenoble Alpes University, CNRS, Inst. NÉEL, F-38042 Grenoble, France
  • 2Laboratory for the Chemistry of Novel Materials, University of Mons, Place du Parc 20, BE-7000 Mons, Hainaut, Belgium
  • 3Laboratoire CEISAM - UMR CNR 6230, Université de Nantes, 2 Rue de la Houssinière, BP 92208, 44322 Nantes Cedex 3, France
  • 4Institut Universitaire de France, 1 rue Descartes, 75005 Paris Cedex 5, France
  • 5INAC, SP2M/L_Sim, CEA/UJF Cedex 09, 38054 Grenoble, France

  • *gabriele.davino@neel.cnrs.fr
  • xavier.blase@neel.cnrs.fr

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Vol. 1, Iss. 2 — July 2017

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