Electric-Field-Effect Modulation of the Transition Temperature, Mobile Carrier Density, and In-Plane Penetration Depth of NdBa2Cu3O7δ Thin Films

D. Matthey, N. Reyren, J.-M. Triscone, and T. Schneider
Phys. Rev. Lett. 98, 057002 – Published 31 January 2007

Abstract

We explore the relationship between the critical temperature Tc, the mobile areal carrier density n2D, and the zero-temperature magnetic in-plane penetration depth λab(0) in very thin underdoped NdBa2Cu3O7δ films near the superconductor to insulator transition using the electric-field-effect technique. Having established consistency with a Kosterlitz-Thouless transition, we observe that TKT depends linearly on n2D, the signature of a quantum superconductor to insulator transition in two dimensions with zν¯=1, where z is the dynamic and ν¯ is the critical exponent of the in-plane correlation length.

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  • Received 3 March 2006

DOI:https://doi.org/10.1103/PhysRevLett.98.057002

©2007 American Physical Society

Authors & Affiliations

D. Matthey, N. Reyren, and J.-M. Triscone

  • DPMC, University of Geneva, 24 quai Ernest-Ansermet, 1211 Geneva 4, Switzerland

T. Schneider

  • Physikinstitut, University of Zurich, Winterthurerstrasse 190, 8057 Zurich, Switzerland

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Issue

Vol. 98, Iss. 5 — 2 February 2007

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