Abstract
We explore the relationship between the critical temperature , the mobile areal carrier density , and the zero-temperature magnetic in-plane penetration depth in very thin underdoped films near the superconductor to insulator transition using the electric-field-effect technique. Having established consistency with a Kosterlitz-Thouless transition, we observe that depends linearly on , the signature of a quantum superconductor to insulator transition in two dimensions with , where is the dynamic and is the critical exponent of the in-plane correlation length.
- Received 3 March 2006
DOI:https://doi.org/10.1103/PhysRevLett.98.057002
©2007 American Physical Society