Comment on “Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures”

A. A. Shashkin, V. T. Dolgopolov, and S. V. Kravchenko
Phys. Rev. Lett. 93, 269705 – Published 21 December 2004

Abstract

A Comment on the Letter by V. M. Pudalov et al., Phys. Rev. Lett. 91, 125403 (2003).

  • Figure
  • Received 5 November 2003

DOI:https://doi.org/10.1103/PhysRevLett.93.269705

©2004 American Physical Society

Authors & Affiliations

A. A. Shashkin1, V. T. Dolgopolov1, and S. V. Kravchenko2

  • 1Institute of Solid State Physics Chernogolovka, Moscow District 142432, Russia
  • 2Physics Department Northeastern University Boston, Massachusetts 02115, USA

Comments & Replies

Comment on “Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures”

S. Das Sarma and E. H. Hwang
Phys. Rev. Lett. 93, 269703 (2004)

Pudalov et al. Reply:

V. M. Pudalov, M. Gershenson, H. Kojima, G. Brunthaler, and G. Bauer
Phys. Rev. Lett. 93, 269704 (2004)

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Original Article

Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures

V. M. Pudalov, M. E. Gershenson, H. Kojima, G. Brunthaler, A. Prinz, and G. Bauer
Phys. Rev. Lett. 91, 126403 (2003)

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Issue

Vol. 93, Iss. 26 — 31 December 2004

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