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Direct Observation of Optically Injected Spin-Polarized Currents in Semiconductors

J. Hübner, W. W. Rühle, M. Klude, D. Hommel, R. D. R. Bhat, J. E. Sipe, and H. M. van Driel
Phys. Rev. Lett. 90, 216601 – Published 30 May 2003
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Abstract

Quantum interference of one- and two-photon excitation of unbiased semiconductors yields ballistic currents of carriers. The magnitudes and directions of the currents and the spin orientations of the carriers are controlled by the polarization and relative phase of the exciting femtosecond laser fields. We provide direct experimental evidence for the spin polarization of the optically injected spin currents by detecting a phase-dependent spatial shift of the circularly polarized photoluminescence in cubic ZnSe.

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  • Received 20 December 2002

DOI:https://doi.org/10.1103/PhysRevLett.90.216601

©2003 American Physical Society

Authors & Affiliations

J. Hübner and W. W. Rühle

  • Department of Physics and Materials Science Center, University of Marburg, Renthof 5, 35032 Marburg, Germany

M. Klude and D. Hommel

  • Institute of Solid State Physics, Semiconductor Epitaxy, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany

R. D. R. Bhat, J. E. Sipe, and H. M. van Driel

  • Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7, Canada

See Also

Spin Currents–Free of Charge

Adrian Cho
Phys. Rev. Focus 11, 24 (2003)

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Issue

Vol. 90, Iss. 21 — 30 May 2003

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