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Quasiballistic Magnetization Reversal

H. W. Schumacher, C. Chappert, R. C. Sousa, P. P. Freitas, and J. Miltat
Phys. Rev. Lett. 90, 017204 – Published 8 January 2003
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Abstract

We demonstrate a quasiballistic switching of the magnetization in a microscopic magnetoresistive memory cell. By means of time resolved magnetotransport, we follow the large angle precession of the free layer magnetization of a spin valve cell upon application of transverse magnetic field pulses. Stopping the field pulse after a 180° precession rotation leads to magnetization reversal with reversal times as short as 165 ps. This switching mode represents the fundamental ultrafast limit of field induced magnetization reversal.

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  • Received 23 July 2002

DOI:https://doi.org/10.1103/PhysRevLett.90.017204

©2003 American Physical Society

Authors & Affiliations

H. W. Schumacher1,*, C. Chappert1, R. C. Sousa2, P. P. Freitas2, and J. Miltat3

  • 1Institut d’Electronique Fondamentale, UMR 8622 CNRS, Université Paris Sud, Bâtiment 220, 91405 Orsay, France
  • 2Instituto de Engenharia de Sistemas e Computadores, Rua Alves Redol 9, P-1000 Lisboa, Portugal
  • 3Laboratoire de Physique des Solides, UMR 8502, CNRS, Université Paris Sud, Bâtiment 510, 91405 Orsay, France

  • *Author to whom correspondence should be addressed. Electronic address: schumach@ief.u-psud.fr

See Also

Swifter Switching

Celeste Biever
Phys. Rev. Focus 11, 3 (2003)

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Vol. 90, Iss. 1 — 10 January 2003

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