Abstract
We report on the electrical modulation of double exchange ferromagnetism at room temperature in hole-doped manganites of a metal oxide junction. In this doped junction, the temperature dependence of the junction resistance shows a metal-insulator transition whose temperature, corresponding to that of ferromagnetic transition, is hugely modulated from 290 to 340 K by a bias voltage increasing from to . The magnetoresistance can also be modulated electrically.
- Received 16 April 2001
DOI:https://doi.org/10.1103/PhysRevLett.88.027204
©2001 American Physical Society