Electronic Transport in Metal Nanocrystal Arrays: The Effect of Structural Disorder on Scaling Behavior

Raghuveer Parthasarathy, Xiao-Min Lin, and Heinrich M. Jaeger
Phys. Rev. Lett. 87, 186807 – Published 16 October 2001
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Abstract

We investigate the impact of structural disorder on electronic transport in gold nanocrystal monolayers. Arrays ranging from void-filled networks to well-ordered superlattices show clear voltage thresholds (VT) due to Coulomb blockade, and temperature-independent conduction indicative of quantum tunneling. Current-voltage characteristics of arrays with and without long-range structural order were found to collapse onto distinct scaling curves. The former follow a single power law: I(VVT)ζ, ζ=2.25±0.1. The latter show additional structure, reflecting the underlying disordered topology.

  • Received 21 February 2001

DOI:https://doi.org/10.1103/PhysRevLett.87.186807

©2001 American Physical Society

Authors & Affiliations

Raghuveer Parthasarathy, Xiao-Min Lin, and Heinrich M. Jaeger

  • James Franck Institute and Department of Physics, University of Chicago, Chicago, Illinois 60637

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Issue

Vol. 87, Iss. 18 — 29 October 2001

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