Doping and Magnetic Field Dependence of In-Plane Tunneling into YBa2Cu3O7x: Possible Evidence for the Existence of a Quantum Critical Point

Y. Dagan and G. Deutscher
Phys. Rev. Lett. 87, 177004 – Published 8 October 2001
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Abstract

We present tunneling measurements into (1,1,0) YBa2Cu3O7x films at various doping levels around the optimum. We find that, above a certain doping level near optimum doping, a spontaneous zero bias conductance peak splitting, δ, appears. It increases with doping. It also increases with magnetic field applied along the c axis, for both underdoped and overdoped films. The low field susceptibility χ=dδdH|H0 is maximum, possibly diverging when the spontaneous value of δ goes to zero. These results suggest a transition from a pure dx2y2 to a d+idxy or d+is order parameter.

  • Received 2 August 2000

DOI:https://doi.org/10.1103/PhysRevLett.87.177004

©2001 American Physical Society

Authors & Affiliations

Y. Dagan and G. Deutscher

  • School of Physics and Astronomy, Raymond and Beverly Sackler Faculty of Exact Sciences, 69978 Tel Aviv, Israel

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Vol. 87, Iss. 17 — 22 October 2001

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