Radio-Frequency Single-Electron Transistor as Readout Device for Qubits: Charge Sensitivity and Backaction

A. Aassime, G. Johansson, G. Wendin, R. J. Schoelkopf, and P. Delsing
Phys. Rev. Lett. 86, 3376 – Published 9 April 2001
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Abstract

We study the radio-frequency single-electron transistor (rf-SET) as a readout device for charge qubits. We measure the charge sensitivity of an rf-SET to be 6.3μe/Hz and evaluate the backaction of the rf-SET on a single Cooper-pair box. This allows us to compare the needed measurement time with the mixing time of the qubit imposed by the measurement. We find that the mixing time can be substantially longer than the measurement time, which would allow readout of the state of the qubit in a single shot measurement.

  • Received 21 November 2000

DOI:https://doi.org/10.1103/PhysRevLett.86.3376

©2001 American Physical Society

Authors & Affiliations

A. Aassime1, G. Johansson1, G. Wendin1, R. J. Schoelkopf2, and P. Delsing1

  • 1Microtechnology Center at Chalmers MC2, Department of Microelectronics and Nanoscience, Chalmers University of Technology and Göteborg University, S-412 96, Göteborg, Sweden
  • 2Departments of Applied Physics and Physics, Yale University, New Haven, Connecticut 06520-8284

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Vol. 86, Iss. 15 — 9 April 2001

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