Abstract
The resistance of the 2DEG on the vicinal Si surface shows unusual behavior which is very different from that in Si MOSFET's studied earlier. The low-temperature crossover from (“insulator”) to (“metal”) occurs at a low resistance of . This crossover, which we attribute to the existence of a narrow impurity band at the interface, is accompanied by a distinct hysteresis in the resistance. At higher temperatures, another change in the sign of is seen. We describe it by temperature dependent impurity scattering of the 2DEG near the transition from the degenerate to nondegenerate state.
- Received 6 March 2000
DOI:https://doi.org/10.1103/PhysRevLett.86.272
©2001 American Physical Society