Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs

Jongsoo Yoon; C. C. Li; D. Shahar; D. C. Tsui; M. Shayegan

doi:10.1103/PhysRevLett.84.4421

Parallel Magnetic Field Induced Transition in Transport in the Dilute Two-Dimensional Hole System in GaAs

Jongsoo Yoon, C. C. Li, D. Shahar, D. C. Tsui, and M. Shayegan

Phys. Rev. Lett. 84, 4421 – Published 8 May 2000

Abstract

A magnetic field applied parallel to the two-dimensional hole system in the GaAs/AlGaAs heterostructure, which is metallic in the absence of an external magnetic field, can drive the system into insulating at a finite field through a well-defined transition. The value of resistivity at the transition is found to depend strongly on density.

Received 2 July 1999

DOI:https://doi.org/10.1103/PhysRevLett.84.4421

Authors & Affiliations

Jongsoo Yoon^1,*, C. C. Li¹, D. Shahar², D. C. Tsui¹, and M. Shayegan¹

¹Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544
²Department of Condensed Matter Physics, Weizmann Institute, Rehovot 76100, Israel