Abstract
Mechanical behavior of the interface is studied using million atom molecular dynamics simulations. At a critical value of applied strain parallel to the interface, a crack forms on the silicon nitride surface and moves toward the interface. The crack does not propagate into the silicon substrate; instead, dislocations are emitted when the crack reaches the interface. The dislocation loop propagates in the plane of the silicon substrate with a speed of . Time evolution of the dislocation emission and nature of defects is studied.
- Received 19 July 1999
DOI:https://doi.org/10.1103/PhysRevLett.84.322
©2000 American Physical Society