Electron and Hole g Factors and Exchange Interaction from Studies of the Exciton Fine Structure in In0.60Ga0.40As Quantum Dots

M. Bayer, A. Kuther, A. Forchel, A. Gorbunov, V. B. Timofeev, F. Schäfer, J. P. Reithmaier, T. L. Reinecke, and S. N. Walck
Phys. Rev. Lett. 82, 1748 – Published 22 February 1999
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Abstract

Self-assembled In0.60Ga0.40As quantum dots (QD's) have been studied by single dot magnetophotoluminescence spectroscopy ( B8T). At B=0 a splitting of the exciton ( X) emission is observed which we ascribe to an asymmetry of the confinement potential. With increasing B the emission splits into a quadruplet corresponding to the m=±2 and ±1X states, which originates from a reduction of the cubic symmetry of the QD's. From the spectroscopic data we obtain values for the electron ( e) and hole ( h) g factors. We also determine the X singlet-triplet splitting which is found to be enhanced over bulk values by about an order of magnitude due to the increase of the eh overlap in the QD's.

  • Received 5 October 1998

DOI:https://doi.org/10.1103/PhysRevLett.82.1748

©1999 American Physical Society

Authors & Affiliations

M. Bayer, A. Kuther, A. Forchel, A. Gorbunov*, V. B. Timofeev, F. Schäfer, and J. P. Reithmaier

  • Technische Physik, Universität Würzburg, Am Hubland, D-97094 Würzburg, Germany

T. L. Reinecke and S. N. Walck

  • Naval Research Laboratory, Washington, D.C. 20375

  • *On leave from the Institute of Solid State Physics, 142432 Chernogolovka, Russia.
  • Present address: Institute of Optics, University of Rochester, Rochester, NY 14627.

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Vol. 82, Iss. 8 — 22 February 1999

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