Coupled Electron-Hole Dynamics at the <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mi>Si</mi><mi>/</mi><mi>SiO</mi><mrow><msub><mrow><mi></mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span> Interface

W. Wang; G. Lüpke; M. Di Ventra; S. T. Pantelides; J. M. Gilligan; N. H. Tolk; I. C. Kizilyalli; P. K. Roy; G. Margaritondo; G. Lucovsky

doi:10.1103/PhysRevLett.81.4224

Coupled Electron-Hole Dynamics at the $Si / SiO_{2}$ Interface

W. Wang, G. Lüpke, M. Di Ventra, S. T. Pantelides, J. M. Gilligan, N. H. Tolk, I. C. Kizilyalli, P. K. Roy, G. Margaritondo, and G. Lucovsky

Phys. Rev. Lett. 81, 4224 – Published 9 November 1998

Abstract

We report a new and surprising enhancement of the electric field at the $Si / SiO_{2}$ interface following the cessation of intense pulsed near-infrared radiation. The phenomenon, measured by optical second-harmonic generation, occurs only for photon energies and oxide film thickness that exceed respective thresholds. We attribute the new effect to multiphoton hole injection into the oxide and to an asymmetry in electron and hole dynamics, in particular to distinctly different trapping and detrapping processes.

Received 22 June 1998

DOI:https://doi.org/10.1103/PhysRevLett.81.4224

Authors & Affiliations

W. Wang, G. Lüpke, M. Di Ventra, S. T. Pantelides, J. M. Gilligan, and N. H. Tolk

Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235

I. C. Kizilyalli and P. K. Roy

Bell Laboratories, Lucent Technologies, Orlando, Florida 32819-8698

G. Margaritondo

Department of Physics, Ecole Polytechnique Fédérale of Lausanne, CH-1015 Lausanne, Switzerland

G. Lucovsky

Departments of Physics, Material Science and Engineering, and Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202