Abstract
The top layer of the surface consists of rows of As-As dimers. However, our scanning tunneling microscopy study shows that, in the initial adsorption stage, monoenergetic molecules (0.89 eV) react exclusively with the second layer Ga atoms exposed in trenches or at defects on the surface. A simple molecular orbital argument was used to explain the dynamics of forming gallium bromide species at various surface Ga sites.
- Received 3 February 1998
DOI:https://doi.org/10.1103/PhysRevLett.81.413
©1998 American Physical Society