Pressure-Induced Molecular Dissociation and Metallization in Hydrogen-Bonded H2S Solid

M. Sakashita, H. Yamawaki, H. Fujihisa, K. Aoki, S. Sasaki, and H. Shimizu
Phys. Rev. Lett. 79, 1082 – Published 11 August 1997
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Abstract

Infrared spectra at high pressure and room temperature reveal that molecular dissociation and metallization occur in solid H2S near 46 and 96 GPa, respectively. The disappearance of SH stretching bands in the 23002500cm1 region and simultaneous appearance of a lattice vibrational mode around 1300cm1 signal the molecular dissociation. At higher pressures, a low-energy electronic absorption band develops and eventually extends throughout the infrared region studied (7006000cm1). Thus, metallization seems to occur by closing a band gap originating from S-S bond formation in the dissociated phase.

  • Received 3 March 1997

DOI:https://doi.org/10.1103/PhysRevLett.79.1082

©1997 American Physical Society

Authors & Affiliations

M. Sakashita, H. Yamawaki, H. Fujihisa, and K. Aoki

  • National Institute of Materials and Chemical Research, Tsukuba, Ibaraki 305, Japan

S. Sasaki and H. Shimizu

  • Department of Electronics and Computer Engineering, Gifu University, Gifu 501-11, Japan

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Issue

Vol. 79, Iss. 6 — 11 August 1997

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