Abstract
Formation of bonded dicarbon C-C centers is deduced from the observation of Raman lines at 1742, 1708, and in GaAs codoped with C and C after annealing at 850 °C with concomitant loss of vibrational scattering from . The frequencies agree with results of ab initio theory for a C-C split interstitial (deep donor) formed by the trapping of a mobile interstitial C (displaced ) atom by an undisplaced acceptor. Other mechanisms of carrier loss are inferred since a weaker Raman triplet is detected at 1859, 1824, and from a different C-C complex.
- Received 9 July 1996
DOI:https://doi.org/10.1103/PhysRevLett.78.74
©1997 American Physical Society