Synchronization and Chaos Induced by Resonant Tunneling in GaAs/AlAs Superlattices

Yaohui Zhang, Jörg Kastrup, Robert Klann, Klaus H. Ploog, and Holger T. Grahn
Phys. Rev. Lett. 77, 3001 – Published 30 September 1996
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Abstract

A semiconductor superlattice represents an ideal one-dimensional nonlinear dynamical system with a large number of degrees of freedom. The effective nonlinear coupling originates from sequential resonant tunneling between adjacent wells. We have observed spontaneous chaotic and periodic current oscillations in a doped GaAs/AlAs superlattice by changing only the applied bias. When the system is driven with an incommensurate sinusoidal voltage for a fixed bias, transitions between synchronization and chaos are observed via pattern forming bifurcations. A driving signal of sufficiently large amplitude can suppress the occurrence of chaos and produce a synchronized oscillation mode with a subharmonic of the driving frequency.

  • Received 19 March 1996

DOI:https://doi.org/10.1103/PhysRevLett.77.3001

©1996 American Physical Society

Authors & Affiliations

Yaohui Zhang, Jörg Kastrup, Robert Klann, and Klaus H. Ploog

  • Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin, Germany

Holger T. Grahn

  • Research Center for Quantum Effect Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan

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Issue

Vol. 77, Iss. 14 — 30 September 1996

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